A p-n junction diode that emits light as a result of direct radiative recombination of excess electron-hole pairs (see recombination processes). In direct-gap semiconductors, such as gallium arsenide, it is a major part of recombination and a significant amount of light will be emitted following injection of excess minority carriers. The quantity of light produced in a forward-biased p-n junction diode formed from such material will be proportional to the numbers of excess minority carriers, i.e. to the bias current. The useful light obtained from the diode is dependent on the optical quality of the crystal surfaces. The frequency, and hence the colour, is a property of the material used, since the energy of the emitted photon is determined by the band-gap energy. LEDs are useful for low-voltage display devices, such as calculators or digital watches, and are now widely used in flatscreen displays. Single LEDs are widely used as on/off indicators. See also active-matrix organic light-emitting diode; organic light-emitting diode.
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