“hole”的概念、定义、翻译、参考文献-科学参考

hole

Physics

A vacant electron position in the lattice structure of a solid that behaves like a mobile positive charge carrier with a negative rest energy. See semiconductor.

Chemistry

1. A vacant electron position in the lattice structure of a solid that behaves like a mobile positive charge carrier.
2. A vacant electron position in one of the inner orbitals of an atom.

Electronics and Electrical Engineering

An empty energy level in the valence band of a semiconductor due to an electron being lost from the band by thermal excitation (see electron-hole pair) or being trapped by an acceptor impurity (see semiconductor). The total current resulting from electrons in a filled valence band is zero:
$j = n e v = e Σ_{i = l}^{n} v_{i} = 0$
where j is the current density, n and e the electron density and charge, and v the average velocity of electrons in the valence band. If the jth electron is excited to the conduction band or trapped by an impurity then
$e Σ_{i = l, i \neq j}^{n} v_{i} = - e v_{j}$
The net effect of the mobile electrons occupying all but the jth energy level is therefore equivalent to the effect of a single positive electronic charge ‘occupying’ the vacant level and hence termed a hole. The hole velocity is equal to the velocity of an electron in the same energy level.
Under the influence of an electric field holes can drift through the material by a process of continuous exchange with adjacent electrons (see hole conduction). They therefore act as mobile positive charge carriers in the valence band and are the majority carriers in p-type semiconductors.

单词	hole
释义	hole Physics A vacant electron position in the lattice structure of a solid that behaves like a mobile positive charge carrier with a negative rest energy. See semiconductor. Chemistry 1. A vacant electron position in the lattice structure of a solid that behaves like a mobile positive charge carrier. 2. A vacant electron position in one of the inner orbitals of an atom. Electronics and Electrical Engineering An empty energy level in the valence band of a semiconductor due to an electron being lost from the band by thermal excitation (see electron-hole pair) or being trapped by an acceptor impurity (see semiconductor). The total current resulting from electrons in a filled valence band is zero: $j = n e v = e Σ_{i = l}^{n} v_{i} = 0$ where j is the current density, n and e the electron density and charge, and v the average velocity of electrons in the valence band. If the jth electron is excited to the conduction band or trapped by an impurity then $e Σ_{i = l, i \neq j}^{n} v_{i} = - e v_{j}$ The net effect of the mobile electrons occupying all but the jth energy level is therefore equivalent to the effect of a single positive electronic charge ‘occupying’ the vacant level and hence termed a hole. The hole velocity is equal to the velocity of an electron in the same energy level. Under the influence of an electric field holes can drift through the material by a process of continuous exchange with adjacent electrons (see hole conduction). They therefore act as mobile positive charge carriers in the valence band and are the majority carriers in p-type semiconductors.
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