A technique in photolithography that uses two or more layers of resist to produce a desired pattern. The bottom layer of resist is relatively thick and produces a very planar topography. The topmost layer is very thin and is used for the optical exposure. The exposed pattern in the top layer is then replicated in the lower layer or layers, i.e. the topmost layer acts as a mask for the lower layers. Bilevel resist consists of only two layers, one thick and one thin. Intermixing between the two layers of resist can be a problem, and to prevent this trilevel resists can be used. In this case a very thin transfer layer of metal or dielectric film is used to completely separate the two layers of resist. Multilevel resist techniques are rather complex but offer several advantages, particularly the planar surface produced and initial exposure in a thin planar resist which provides the optimum conditions for photolithography.