A method for defining nanometre-scale structures from a prepatterned mould in thermoplastic materials and then transferring these patterns to semiconductor, metallic, and magnetic materials. A resist, such as polymethylmethacrylate, is heated above its glass transition temperature and then deformed by the mould. After the resist has cooled down, the mould is removed and a negative image of the mould’s pattern remains in the resist. Further pattern transfer is made using wet etching, ion milling, or dry etching. A resolution of 10 nm can be achieved using nanoimprint lithography. Compared with conventional electron-beam lithography, this technique is better suited to mass production.