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横向双扩散金属氧化物半导体场效应晶体管
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横向双扩散金属氧化物半导体场效应晶体管
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功率半导体器件
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lateral double diffusion metal-oxide-semiconductor field effect transistor;LDMOSFET
横向双扩散金属氧化物半导体场效应晶体管
利用硼、磷扩散系数不同,工艺上可通过在同一窗口相继进行硼、磷杂质两次扩散形成器件的N+源区和P阱(P-well),且由硼、磷扩散的横向宽度之差精确决定沟道长度的场效应晶体管。
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