An equation that relates the time rate of change in the number of particles in a given volume to the inflow and outflow of particles. In electronics, this usually refers to the continuity of electrons or holes in a semiconductor in which current is flowing. When considering the flow of electrons in a piece of semiconductor, the electron continuity can be determined by considering the flow of electrons through an elemental slice of the semiconductor (see diagram). The rate of change of the number of electrons in the elemental volume of width Δx is equal to the number of electrons flowing in minus the number flowing out, plus the number generated per unit time minus the number that recombine (with holes) per unit time:
where N is the number of electrons. Considering the diagram, this can be written as
where n, the number density of electrons, is multiplied by the elemental volume (A.Δx) to obtain the actual number; j(x) is the flux of electrons across the plane at x, and G and R are generation and recombination rates of electrons per unit volume, respectively.
If the width of the element, Δx, is small enough, then using the definition of differentiation:
the flow terms in j can be replaced, yielding a continuity equation:
Normally in electronics, the flux term is expressed as a current density, J, which can be measured. Thermal generation and recombination are processes that are continually occurring in a semiconductor, and are balanced in equilibrium. It is more usual to consider the recombination of excess charge carriers in a semiconductor, or how the carriers in the semiconductor progress from nonequilibrium conditions back to thermal equilibrium. Thus, cancelling the thermal components from G and R, and substituting for current density,
which for electrons can be written
The first term is derived from drift current, where μ is the electron drift mobility and E is the electric field; the second term is derived from diffusion current, where D is the electron diffusivity; n0 is the equilibrium electron density and 1/τ is the recombination rate for electrons. A similar expression can be written for holes.