The bringing together of two conductors so that current may flow. The resistance at the interface between the conductors is the contact resistance. In the case of an ohmic contact between a metal and a semiconductor, the specific contact resistance is the contact resistance of a unit area for current flow perpendicular to the contact. In the case of a planar configuration where the final direction of current flow is parallel to the plane of the metal (see diagram), the contact resistance is defined to be the resistance between the metal and an imaginary plane at the edge of and perpendicular to the metal, and the transfer length, L, is the distance from the edge of the metal at which the current in the semiconductor has fallen to 1/e of its original value.
If the conductors are made from two different materials a difference of potential will arise when they are placed in contact. This contact potential results from a difference in the work functions of the two materials and is usually of the order of a few tenths of a volt. If the contact is made between two semiconductors of different polarities or between a metal and a semiconductor, a built-in field will be produced with an associated contact resistance to current flow. See also p-n junction; metal-semiconductor contact.