“Zener diode”的概念、定义、翻译、参考文献-科学参考

Zener diode

Physics

A type of semiconductor diode, consisting of a p–n junction with high doping concentrations on either side of the junction. It acts as a rectifier until the applied reverse voltage reaches a certain value, the Zener breakdown voltage, when the device becomes conducting. This effect occurs as a result of electrons being excited directly from the valence band into the conduction band (see energy bands). Zener diodes are used in voltage-limiting circuits; they are named after the US physicist Clarence Melvin Zener (1905–93), who described the electrical breakdown associated with this type of diode in 1934.

Electronics and Electrical Engineering

A p-n junction diode that has sufficiently high doping concentrations on each side of the junction for Zener breakdown to occur. The diode therefore has a well-defined reverse breakdown voltage (of the order of a few volts only) and can be used as a voltage regulator. Unlike tunnel diodes, the doping level is not high enough for the semiconductor to become degenerate and the diode behaves like a normal p-n junction in the forward direction.
The term is also applied to less highly doped p-n junction diodes that have higher breakdown voltages (up to 200 volts) and undergo avalanche breakdown. Most so-called Zener diodes are in fact avalanche breakdown diodes. True Zener diodes have a low value of reverse breakdown voltage.

单词	Zener diode
释义	Zener diode Physics A type of semiconductor diode, consisting of a p–n junction with high doping concentrations on either side of the junction. It acts as a rectifier until the applied reverse voltage reaches a certain value, the Zener breakdown voltage, when the device becomes conducting. This effect occurs as a result of electrons being excited directly from the valence band into the conduction band (see energy bands). Zener diodes are used in voltage-limiting circuits; they are named after the US physicist Clarence Melvin Zener (1905–93), who described the electrical breakdown associated with this type of diode in 1934. Electronics and Electrical Engineering A p-n junction diode that has sufficiently high doping concentrations on each side of the junction for Zener breakdown to occur. The diode therefore has a well-defined reverse breakdown voltage (of the order of a few volts only) and can be used as a voltage regulator. Unlike tunnel diodes, the doping level is not high enough for the semiconductor to become degenerate and the diode behaves like a normal p-n junction in the forward direction. The term is also applied to less highly doped p-n junction diodes that have higher breakdown voltages (up to 200 volts) and undergo avalanche breakdown. Most so-called Zener diodes are in fact avalanche breakdown diodes. True Zener diodes have a low value of reverse breakdown voltage.
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