“Hall effect”的概念、定义、翻译、参考文献-科学参考

Hall effect

Physics

The production of an e.m.f. within a conductor or semiconductor through which a current is flowing when there is a strong transverse magnetic field. The potential difference develops at right angles to both the current and the field. It is caused by the deflection of charge carriers by the field and was first discovered by Edwin Hall (1855–1938) in 1879. The strength of the electric field E_H produced is given by the relationship E_H=R_HjB, where j is the current density, B is the magnetic flux density, and R_H is a constant called the Hall coefficient. The value of R_H can be shown to be 1/ne, where n is the number of charge carriers per unit volume and e is the electronic charge. The effect is used to investigate the nature of charge carriers in metals and semiconductors, in the Hall probe for the measurement of magnetic fields, and in magnetically operated switching devices. See also quantum Hall effect.

Hall effect.

Electronics and Electrical Engineering

If current flows in a bar of conductor or semiconductor that is placed in a magnetic field, where the current flow and magnetic field are at right angles, an electric field is set up across the bar, orthogonal to both current flow and magnetic field directions. This effect arises because the charge carriers in the bar experience a force F due to the magnetic field:
$F = e . (v \times B) = e v_{x} B_{z} in the y ‐ direction$
where v is the drift velocity of carriers of charge e, and B is the magnetic flux density. Charge carriers are thus forced towards one side of the bar, creating an excess space charge and hence an electric field E_y in the y-direction, across the bar. In equilibrium the forces due to the transverse electric field and the magnetic field are in balance:
$e E_{y} = - e v_{x} B_{z}$
or
$E_{y} = - R_{H} J B$
where J is the current density along the bar, and R_H is the Hall coefficient of the material of the bar and is related to the carrier concentration in the bar. The voltage due to this transverse electric field is known as the Hall voltage. Measurement of the Hall voltage enables the Hall coefficient to be found, and hence the type and density of the charge carriers in the bar to be determined:
in an n-type semiconductor,
$R_{H} = - \frac{r}{n e}$
in a p-type semiconductor,
$R_{H} = + \frac{r}{p e}$
where n and p are the electron and hole densities, respectively, and r is a function of the detailed charge-scattering mechanisms in the material.
https://www.allaboutcircuits.com/technical-articles/understanding-and-applying-the-hall-effect/ An introduction to the Hall effect, on the All About Circuits website
https://www.youtube.com/watch?v=AcRCgyComEw A video demonstration of the Hall effect

Geology and Earth Sciences

A strip of metal or semiconductor carrying an electrical current within a strong, transverse, magnetic field develops a potential at right angles to both the current and the field. This forms the basis for some sensitive magnetometers. The effect was discovered by Edwin Hall (1855–1938) in 1879.

单词	Hall effect
释义	Hall effect Physics The production of an e.m.f. within a conductor or semiconductor through which a current is flowing when there is a strong transverse magnetic field. The potential difference develops at right angles to both the current and the field. It is caused by the deflection of charge carriers by the field and was first discovered by Edwin Hall (1855–1938) in 1879. The strength of the electric field E_H produced is given by the relationship E_H=R_HjB, where j is the current density, B is the magnetic flux density, and R_H is a constant called the Hall coefficient. The value of R_H can be shown to be 1/ne, where n is the number of charge carriers per unit volume and e is the electronic charge. The effect is used to investigate the nature of charge carriers in metals and semiconductors, in the Hall probe for the measurement of magnetic fields, and in magnetically operated switching devices. See also quantum Hall effect. Hall effect. Electronics and Electrical Engineering If current flows in a bar of conductor or semiconductor that is placed in a magnetic field, where the current flow and magnetic field are at right angles, an electric field is set up across the bar, orthogonal to both current flow and magnetic field directions. This effect arises because the charge carriers in the bar experience a force F due to the magnetic field: $F = e . (v \times B) = e v_{x} B_{z} in the y ‐ direction$ where v is the drift velocity of carriers of charge e, and B is the magnetic flux density. Charge carriers are thus forced towards one side of the bar, creating an excess space charge and hence an electric field E_y in the y-direction, across the bar. In equilibrium the forces due to the transverse electric field and the magnetic field are in balance: $e E_{y} = - e v_{x} B_{z}$ or $E_{y} = - R_{H} J B$ where J is the current density along the bar, and R_H is the Hall coefficient of the material of the bar and is related to the carrier concentration in the bar. The voltage due to this transverse electric field is known as the Hall voltage. Measurement of the Hall voltage enables the Hall coefficient to be found, and hence the type and density of the charge carriers in the bar to be determined: in an n-type semiconductor, $R_{H} = - \frac{r}{n e}$ in a p-type semiconductor, $R_{H} = + \frac{r}{p e}$ where n and p are the electron and hole densities, respectively, and r is a function of the detailed charge-scattering mechanisms in the material. https://www.allaboutcircuits.com/technical-articles/understanding-and-applying-the-hall-effect/ An introduction to the Hall effect, on the All About Circuits website https://www.youtube.com/watch?v=AcRCgyComEw A video demonstration of the Hall effect Geology and Earth Sciences A strip of metal or semiconductor carrying an electrical current within a strong, transverse, magnetic field develops a potential at right angles to both the current and the field. This forms the basis for some sensitive magnetometers. The effect was discovered by Edwin Hall (1855–1938) in 1879.
随便看	extinction, interstellar extinguishing agent extra-binomial variation extracellular extracellular matrix extraclast extract extraction extractive distillation extractor extraembryonic membranes extraformational extrafusal extragalactic nebula extraneous material Extranet extranet extranuclear genes extraordinary ray extra-orogen basin extrapolate extrapolated failure rate extrapolated mean life extrapolation extrapolation method