A technique that is used to detect crystal defects in a semiconductor slice. The technique requires the presence of a p-n junction, Schottky barrier, or MOS capacitor to be successful. An electron beam is scanned across the sample, which leads to the generation of electron–hole pairs. The charges generated are collected by the diode and the resulting current detected. Any defect or inhomogeneity that affects the production or recombination of the electron–hole pairs will also affect the current detected. Use of a cathode-ray tube synchronized with the scanning electron beam produces an image of the area scanned. EBIC can be easily added to many scanning electron microscopes.