“gallium arsenide semiconductor”的概念、定义、翻译、参考文献-科学参考

单词	gallium arsenide semiconductor
释义	gallium arsenide semiconductor [¦gal·ē·ǝm ¦ärs·ǝn´īd `sem·i·kǝn´dǝk·tǝr] ^{SOLID-STATE PHYSICS} A semiconductor having a forbidden-band gap of 1.4 electronvolts and a maximum operating temperature of 400°C when used in a transistor.
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