“gallium arsenide field-effect transistor”的概念、定义、翻译、参考文献-科学参考

单词	gallium arsenide field-effect transistor
释义	gallium arsenide field-effect transistor [`gal·ē·ǝm `ärs·ǝn´īd `fēld i¦fekt tran`zis·tǝr] ^ELECTRONICS A field-effect transistor in which current between the ohmic source and drain contacts is carried by free electrons in a channel consisting of n-type gallium arsenide, and this current is modulated by a Schottky-barrier rectifying contact called the gate that varies the cross-sectional area of the channel. Abbreviated GaAs FET.
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