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germanium on insulator
绝缘层上锗
由顶层锗(Ge)、二氧化硅(SiO2)绝缘层、硅衬底组成的三明治结构的半导体材料。是一种用于制备高性能器件的半导体衬底材料。
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cather-based renal denervation
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