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屏蔽栅金属氧化物半导体场效应晶体管
释义
屏蔽栅金属氧化物半导体场效应晶体管
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工学
功率半导体器件
释
shielding-gate metal-oxide-semiconductor field effect transistor
屏蔽栅金属氧化物半导体场效应晶体管
在20~300伏的垂直硅基功率器件中,为了提高器件开关速度和单位面积电流能力,引入额外的屏蔽栅极的功率器件。简称屏蔽栅场效应晶体管。
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