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Ⅲ-Ⅴ族高迁移率沟道MOS器件
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Ⅲ-Ⅴ族高迁移率沟道MOS器件
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高迁移率沟道MOS器件
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high mobility Ⅲ-Ⅴ channel metal-oxide-semiconductor field effect transistor
Ⅲ-Ⅴ族高迁移率沟道MOS器件
以铟镓砷(InGaAs)为代表的Ⅲ-Ⅴ族半导体作为沟道材料制作的金属-氧化物-半导体(metal-oxide-semiconductor; MOS)场效应器件。
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