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vertical double diffusion metal-oxide-semiconductor field effect transistor
释义
vertical double diffusion metal-oxide-semiconductor field effect transistor
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工学
功率半导体器件
释
vertical double diffusion metal-oxide-semiconductor field effect transistor;VDMOSFET
垂直双扩散金属氧化物半导体场效应晶体管
栅极(gate,G)和源极(source,S)都在器件的表面,而漏极(drain,D)在器件的背面,电流纵向流动的场效应晶体管。
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