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silicon carbide epitaxy
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silicon carbide epitaxy
Encyclopedia
工学
半导体外延生长
释
silicon carbide epitaxy
碳化硅外延
在碳化硅单晶衬底(基片)上生长有一定要求(厚度和掺杂浓度)、具有特定晶面的碳化硅单晶层的技术。
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monitoring and adjustment of general price level
monitoring and controlling forecasts
monitoring and controlling process
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monitoring and early warning of severe air pollution
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monitoring and evaluation of vocational education
monitoring and forecast of agricultural drought
monitoring and measurement of tunnel and underground engineering
monitoring and voting plane
monitoring area
monitoring camera
monitoring, control, and surveillance system of fishing vessel
monitoring control of rock engineering
monitoring engine
monitoring environment pollution
monitoring equipment of fire-fighting equipment power supply system
monitoring flood and drought hazards
monitoring for climate change
monitoring for environmental actions
monitoring for loads
monitoring for total amount of pollutants in sewage
Monitoring method of public opinion
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