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Schottky injection field effect transistor
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Schottky injection field effect transistor
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超级结器件
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Schottky injection field effect transistor
肖特基注入场效应晶体管
利用肖特基栅极(金属-半导体接触)形成势垒,在沟道层和肖特基接触之间形成耗尽层,通过调节栅极电压改变栅漏、栅源电势差以调制栅下沟道区的厚度,从而控制晶体管电阻及沟道电流大小的半导体器件。又称金属-半导体场效应晶体管(metal-semiconductor field effect transistor; MESFET)。
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