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punch through insulated gate bipolar transistor
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punch through insulated gate bipolar transistor
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工学
绝缘栅双极晶体管
释
punch through insulated gate bipolar transistor; PT-IGBT
穿通型绝缘栅双极晶体管
在N-漂移区与P+集电区之间外延生长一层掺杂浓度较高的N+缓冲层,当器件承受额定的击穿电压时,电场可以穿透整个N-漂移区而进入到N+缓冲层,形成梯形电场分布的绝缘栅双极晶体管。又称穿透型绝缘栅双极晶体管。
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