“punch through insulated gate bipolar transistor”的概念、定义、翻译、参考文献-科学参考

单词	punch through insulated gate bipolar transistor
释义	punch through insulated gate bipolar transistor Encyclopedia 工学绝缘栅双极晶体管释 punch through insulated gate bipolar transistor; PT-IGBT穿通型绝缘栅双极晶体管在N-漂移区与P+集电区之间外延生长一层掺杂浓度较高的N+缓冲层，当器件承受额定的击穿电压时，电场可以穿透整个N-漂移区而进入到N+缓冲层，形成梯形电场分布的绝缘栅双极晶体管。又称穿透型绝缘栅双极晶体管。
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