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ion beam epitaxy
释义
ion beam epitaxy
Encyclopedia
工学
半导体外延生长
释
ion beam epitaxy
离子束外延
在真空环境中,用含有外延生长所需元素的低能离子束在单晶衬底上生长单晶薄膜的技术。简称IBD。又称离子束淀积。
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