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high performance metal-oxide-semiconductor integrated circuit
释义
high performance metal-oxide-semiconductor integrated circuit
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工学
金属-氧化物-半导体集成电路
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high performance metal-oxide-semiconductor integrated circuit
高性能金属-氧化物-半导体集成电路
器件和电路连线的尺寸按某种规律缩小,其他有关参数随着相应变化,以达到高性能(速度快、功耗低、集成密度高)指标的硅栅N沟道金属-氧化物-半导体(negative channel metal-oxide-semiconductor,NMOS)集成电路。简称HMOS电路。
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